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Please use this identifier to cite or link to this item: http://hdl.handle.net/2005/1037

Title: Studies On The Growth And Characterization Of II-VI Semiconductor Nanostructures By Evaporation Methods
Authors: Yuvaraj, D
Advisors: Rao, K Narasimha
Keywords: Evaporation Method
Optoelectronic Devices
Semiconductor Nanostructures - Growth
Zinc Oxide Nanostructures
Zinc Sulfide Nanostructures
Zinc Selenide Nanostructures
Nanostructured Films - Deposition
Zinc Oxide Nanostructured Films
ZnO Nanostructured Films
ZnO Nanostructures
Activated Reactive Evaporation
ZnO Films
ZnO Nanoneedles
Thermal Evaporation
Polymer Substrates
Zn Microstructures
ZnS
Submitted Date: Jul-2009
Series/Report no.: G23508
Abstract: In recent years, there has been growing interests on II-VI semiconductor nanostructures, which are suitable for applications in electronics and optoelectronic devices such as solar cells, UV lasers, sensors, light emitting diodes and field emission displays. II-VI semiconductor nanostructures with different morphologies such as wires, belts, rods, tubes, needles, springs, tetrapods, plates, hierarchical structures and so on, have been widely grown by vapor transport methods. However the process conditions used for the growth of nanostructures still remains incompatible for device fabrication. The realization of practical nanoscale devices using nanostructured film depends mainly on the availability of low cost and lower processing temperatures to manufacture high purity nanostructures on a variety of substrates including glass and polymer. In this thesis work, studies have been made on the growth and characterization of II-VI semiconductor nanostructures prepared at room temperature, under high vacuum, without employing catalysts or templates. (i) ZnO nanostructured films with different morphology such as flowers, needles and shrubs were deposited at room temperature on glass and polymer substrates by plasma assisted reactive process. (ii) Zn/ZnO core/shell nanowires were grown on Si substrates under optimized oxygen partial pressure. Annealing of this core shell nanowire in high vacuum resulted in the formation of ZnO nanocanals. (iii) ZnS and ZnSe nano and microstructures were grown on Si substrates under high vacuum by thermal evaporation. The morphology, structural, optical properties and composition of these nano and microstructures were investigated by XRD, SEM, TEM, Raman, PL and XPS. The growth mechanism behind the formation of the different nanostructures has been explained on the basis of vapour-solid (VS) mechanism.
URI: http://hdl.handle.net/2005/1037
Appears in Collections:Instrumentation and Applied Physics (iap)

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