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Please use this identifier to cite or link to this item: http://hdl.handle.net/2005/312

Title: Transport And Noise In GaAs-Based Devices
Authors: Choudhury, Palash Roy
Advisors: Krupanidhi, S B
Keywords: Gallium Arsenide Semiconductors
Semiconductors
Electronic Transport
Carrier Transport
Transport
Noise
GaAs
Quantum Well Infrared Photodetector (QWIP)
Scattering
Submitted Date: Jul-2004
Abstract: The objective of this work was to study the noise in semiconductors and relate the transport mechanisms in the devices with the noise from the devices. The main part of the work was to set up a system for the measurement of noise in semiconductor devices. To establish the sensitivity of the system, it was calibrated at different temperatures. Some of the results from GaAs pn-junction showed some anomaly from that available in the literature. But certain points are yet to be clarified. This requires certain developments in the measurement system. In the case of QWIPS structures, studies on some samples with varying number of wells are required and in order to study the GR noise spectra and other activated processes, we need to study the temperature dependence of the noise and a larger bias variation for studying the low frequency current noise.
URI: http://hdl.handle.net/2005/312
Appears in Collections:Materials Research Centre (mrc)

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