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|Title: ||Molten-salt Synthesis Of Nanocrystalline Strontium Antimony Manganese Oxide (Sr2SbMnO6) : A Gaint Dielectric Constant Material|
|Authors: ||Baral, Antara|
|Advisors: ||Varma, K B R|
|Keywords: ||Strontium Antimony|
High Dielectric Constants
High Dielectric Constant Materials
Dielectric Constant Materials - Synthesis
Nanocrystalline Strontium Antimony Manganese Oxide Ceramics
Strontium Antimony Manganese Oxide
Material Fabrication Technique
Dielectric Constant Material
|Submitted Date: ||Jul-2009|
|Series/Report no.: ||G23384|
|Abstract: ||High dielectric constant materials are of technological importance as they lead to the miniaturization of the electronic devices. For instance, in the case of memory devices based on capacitive components, such as static and dynamic random access memories, the dielectric constant will ultimately decide the level of miniaturization.
In this context, the observation of anomalously high dielectric constant (>10) in the double perovskite Sr2SbMnO6 (SSM) over wide frequency (100 Hz1 MHz) and (190373 K) temperature range has attracted a great deal of attention. However, unfortunately their dielectric losses were also high which limit their use for possible capacitor and related applications. The dielectric loss however was known to decrease with decreasing crystallite size in electroceramics.
Therefore, the present work has been focused on the synthesis of nanocrystalline SSM powders by moltensalt route. The characterization of the ceramics fabricated from these powders for their microstructural and dielectric properties. A cubic phase of SSM powder was obtained by calcining the as synthesized powders at 900°C/10h by using sulphate flux. The crystallite size was ~ 60 nm. The activation energy associated with the particle growth was found to be 95 ± 5 kJmol-1 . The ceramic sintered at 1075°C/16h exhibited high dielectric constant (>10at 1 kHz) with low loss (0.72 at 1 kHz) at room temperature. The results are interpreted in terms of a twolayer model with conducting grains partitioned from each other by poorly conducting grain boundaries. Using this model, we attributed the two electrical responses in impedance and modulus formalisms to the grain and grain boundary effects, respectively, while the detected Debyelike relaxation and large dielectric constant were explained in terms of MaxwellWagner relaxation.|
|Appears in Collections:||Materials Research Centre (mrc)|
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